| 摘要 |
PROBLEM TO BE SOLVED: To achieve contact etching having no etching remainder, and stable contact etching for preventing a polycrystalline semiconductor layer from vanishing when using a silicon nitride film as an interlayer insulating film. SOLUTION: In a thin-film transistor, a gate electrode 5 is formed on the polycrystalline semiconductor layer 3 via a gate insulating film 4, and the interlayer insulating film 6 is formed further. A contact hole 7 is formed in the interlayer insulating film 6 and the gate insulating film 4, and a signal conductor electrode 8 is connected to the polycrystalline semiconductor layer 3 via the contact hole 7. The interlayer insulating film 6 has a silicon oxide film 6a, and the silicon nitride film 6b formed on it. When the contact hole is etched, a first etching is performed, so as to form, the contact hole by etching until the contact hole reaches the silicon oxide film. Next to the first etching a second etching is performed so that the contact hole is formed by etching in the silicon oxide film and the gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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