| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make it possible to obtain a magnetoresistance effect element and a magnetic memory having high reliability without element damage, and also capable of operating in low power consumption and in low current writing. <P>SOLUTION: The magnetic resistance effect element and magnetic memory comprises a first magnetization fixing layer 6 wherein the direction of magnetization is fixed, having at least one-layer magnetic layer; a magnetization free layer 10 variable in the direction of magnetization; a tunnel barrier layer 8 formed between the first magnetization fixing layer and the magnetization free layer; a nonmagnetic metal layer 12 partially provided in the surface of the opposite side of the tunnel barrier layer of the magnetization free layer; a dielectric layer 11 formed in a portion wherein a nonmagnetic metal layer is not formed in the surface of the opposite side of the tunnel barrier layer of the magnetization free layer; and a second magnetization fixing layer 14 with the direction of magnetization fixed thereto, having at least one-layer magnetic layer which is provided so as to cover the surface of the opposite side of the magnetization free layer of each nonmagnetic metal layer and dielectric layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
