METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a capacitor of a semiconductor device is provided to reduce an incubation cycle of an Ru storage node and to improve step coverage characteristics of the Ru storage node by performing a metal source flushing process on an insulating layer. An insulating layer(35) is formed on a semiconductor substrate(31). A metal source flushing process is performed on the insulating layer, so that the insulating layer is capable of adsorbing easily a metallic material. A metallic storage node is formed on the insulating layer. A dielectric film and a plate node electrode are sequentially formed on the metallic storage node. The flushing process is performed on the insulating layer for 1 to 500 second.