| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems that a soluble substance from a resist contaminates a liquid immersion fluid and gives uneven heat absorption and evaporation to the resist during baking after exposure, and that CRA later used in a lithography process is limited. <P>SOLUTION: A method of liquid immersion lithography to a semiconductor substrate is composed of a step of forming a resist layer 14 on the surface of the semiconductor substrate 10, and a step of exposing the resist layer 14 by using a liquid immersion lithography exposure apparatus. The liquid immersion lithography exposure apparatus uses fluid 26 during the exposure process, and can eliminate not all of the fluid 26 but a part of it after exposure. After the exposure, a treatment process is used to eliminate a remaining part 60 of liquid from the resist layer 14. After the treatment process, each of steps of baking after exposure and development are used. <P>COPYRIGHT: (C)2007,JPO&INPIT |
