发明名称 PHOTONIC CRYSTAL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a photonic crystal element capable of sufficiently exhibiting the optical characteristic when an AR film is formed. <P>SOLUTION: The photonic crystal element is produced by successively laminating dielectric layers on the surface of a substrate having a triangular cross section shape. That is, the substrate is formed of anisotropic material of silicon etc. and is subjected to anisotropic etching, thereby, a recessed surface having a triangular cross section shape is formed on the substrate and, thereon, a multilayer film made of dielectric layers is produced. On the laminate formed in such a manner, a final layer having a film thickness T=&lambda;/(4n) is formed according to a spin coat method, wherein n is refractive index and &lambda; is wavelength of light. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007010927(A) 申请公布日期 2007.01.18
申请号 JP20050190771 申请日期 2005.06.29
申请人 SANYO ELECTRIC CO LTD 发明人 YAMAGUCHI ATSUSHI;OTA SATORU
分类号 G02B1/11;G02B6/12;G02B6/13 主分类号 G02B1/11
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