| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a reverse blocking insulated-gate bipolar transistor having low ON-voltage and low switching loss characteristics whereby a high temperature heat treatment time under atmosphere of an oxygen required for forming an isolation layer can considerably be reduced, and the isolation layer can be formed without newly bringing in oxygen working as a cause to variations in the impurity concentration profile of a drift layer. SOLUTION: The method of manufacturing the reverse blocking insulated-gate bipolar transistor includes a step of forming a second conductive isolation layer surrounding a front side active region acting like an active region, on the surface of the drift layer of a first conductive drift layer, by forming a gas phase diffusion layer on the inner surface of trenches formed in advance at a forming positions of the isolation layer, and thereafter by depositing and growing a second conductive epitaxial layer into the trenches. COPYRIGHT: (C)2007,JPO&INPIT
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