发明名称 DATA INPUT/OUTPUT CIRCUIT OF FLASH MEMORY DEVICE WITH STRUCTURE FOR ENHANCING DATA INPUT/OUTPUT SPEED
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a data input/output circuit of a flash memory device which allows increasing the data input/output speed, and decreasing the page buffer size, by outputting and inputting data via dual data input/output nodes. <P>SOLUTION: This data input/output circuit of the flash memory device comprises a page buffer coupled to at least a pair of bit lines; a page buffer selection circuit which outputs complementary input data received via the pair of input/output lines to the page buffer, or outputs complementary sensing data stored in the page buffer to the pair of input/output lines, in response to buffer selection signals; a column selection circuit which outputs the complementary sensing data received via the pair of input/output lines to a pair of data input/output nodes, respectively, or outputs the complementary input data received via the pair of data input/output nodes to the pair of input/output lines, respectively, in response to column selection signals and gate control signals. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007012238(A) 申请公布日期 2007.01.18
申请号 JP20050364355 申请日期 2005.12.19
申请人 HYNIX SEMICONDUCTOR INC 发明人 PARK JIN SU
分类号 G11C16/02;G11C16/06 主分类号 G11C16/02
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