Method for forming a fully germano-silicided gate mosfet and devices obtained thereof

摘要

A MOSFET comprising a fully germano-silicided gate electrode having a high work function is disclosed. This gate electrode is formed by a self-aligned reaction process between a silicidation metal and a semiconductor material comprising silicon and germanium. Preferably, the fully germano-silicided gate is formed by a reaction between nickel and SiGe. The work function of the fully germano-silicided gate electrode can be tuned.