| 摘要 |
A method for fabricating a semiconductor device is provided to control distribution of the thickness of an interlayer dielectric in a wafer level by solving a problem that polishing residue is left. A first abrasive agent includes a dioxide cerium polishing particle and an additive made of surfactant. While the first polishing agent is supplied to the upper part of a polishing table with a polishing pad, the surface of a polished layer formed on a semiconductor substrate supported by a polishing head is polished until the surface of the polished layer is planarized by using the polishing pad. The surface of the polished layer is polished by using a second polishing agent with a physical polishing function. The surface of the polished layer is polished by using a third polishing agent including a dioxide cerium polishing particle, an additive made of surfactant, and diluent. The diluent is water. The third polishing agent is formed by mixing the first polishing agent and water on a polishing table.
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