| 摘要 |
A PWM driver circuit comprises a load driving power MOS transistor (Q5(Q6)); a CR circuit comprising a resistor (R3(R5)) or a resistor (R4(R6)) and the capacitance of the MOS transistor (Q5(Q6)) and reducing and supplying the voltage through-rate based on the PWM voltage to the gate of the MOS transistor (Q5(Q6)); and a gate voltage control part (4(5)) that, when detecting the completion of a switching from OFF to ON of the MOS transistor (Q5(Q6)) during a gate voltage transient interval when the gate voltage of the MOS transistor (Q5(Q6)) varies, causes the CR circuit to stop its operation to reduce (or increase) the gate potential of the MOS transistor (Q5(Q6)) to a predetermined value. In this way, the switching noise and switching loss can be reduced. ® KIPO & WIPO 2007
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