SOURCE SIDE INJECTION STORAGE DEVICE WITH SPACER GATES AND METHOD THEREFOR
摘要
<p>A storage device structure (10) has two bits of storage per control gate (34) and uses source side injection (SSI) to provide lower programming current. A control gate (34) overlies a drain electrode formed by a doped region (22) that is positioned in a semiconductor substrate (12). Two select gates (49 and 50) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate (34). A source doped region (60) is positioned in the semiconductor substrate (12) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer (42) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.</p>
申请公布号
WO2007005191(A1)
申请公布日期
2007.01.11
申请号
WO2006US22281
申请日期
2006.06.08
申请人
FREESCALE SEMICONDUCTOR;HONG, CHEONG, M;CHINDALORE, GOWRISHANKAR, L