METAL-INSULATOR-METAL CAPACITOR HAVING MULTI-LAYER PARALLEL STRUCTURE

摘要

An MIM capacitor having a multi-layered parallel structure is provided to improve capacity without increasing chip size by reducing the number of metal layers to three layers. A first metal layer is formed on a semiconductor substrate. A lower MIM capacitor(100) is formed on the first metal layer. A second metal layer(60) is formed on the lower MIM capacitor and used as an upper transferring line. An upper transmission line(61) is arranged in a row by being insulated to the second metal layer. The upper transmission line is electrically connected to the first metal layer. An upper MIM capacitor(200) is formed on the second metal layer. A third metal layer(70) is formed on the upper MIM capacitor and electrically connected to the upper MIM capacitor and the upper transmission line.