METHOD AND APPARATUS FOR FORMING OXYNITRIDE FILM AND NITRIDE FILM, OXYNITRIDE FILM, NITRIDE FILM AND BASE MATERIAL

摘要

Uniform nitride film and oxynitride film are formed by low-temperature and high-speed nitriding, not dependent on nitriding time and nitriding temperature of nitriding reaction. A solid dielectric is arranged on at least one opposing plane of a pair of counter electrodes under a pressure of 300 (Torr) or more. A nitrogen gas including an oxide of 0.2% or less is introduced between the pair of counter electrodes so as to apply a magnetic field, and N2 (2nd p.s.) or N2 (H.I.R.) activated species plasma is obtained. The plasma is brought into contact with an object to be processed and the nitride film/oxynitride film is formed on the surface of the object to be processed. ® KIPO & WIPO 2007