| 摘要 |
A drain electrode wiring conductor through which a main current of a MOS transistor takes the form of a flat board, being inserted into a first side of the frame of a case, and extends along the first side. The source electrode wiring conductor also takes the form of a flat board, being inserted into the first side and a second side, and extends parallel to a drain electrode wiring conductor along the first side. The flow of the current in the drain electrode wiring conductor is opposite in direction to the flow of the current in the source electrode wiring conductor. With the configuration, the parasitic inductance of a semiconductor module including a plurality of MOS transistors can be reduced.
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