| 摘要 |
PURPOSE:To obtain a memory cell having a large capacity of the cell and a large operation margin by efficiently utilizing the periphery of a cell plate electrode as the capacity of the cell. CONSTITUTION:In a memory cell having a source 4 as a charge storage node, a cell plate electrode 9 is provided on a gate insulating film 5 on a source. An opening 13 is opened at the electrode 9, a second gate insulating film 8 is provided at the periphery of the opening and at the top of the electrode 9, a charge storage polysilicon electrode 7 is attached on the film 9, and the source 4 is connected to it through the opening 13. It is covered with an interlayer insulating film 11, an opening 12 is opened, and Al wiring 10 is formed and connected to a drain 3. Since the upper and side faces of the electrode 9, the periphery of the opening of the electrode 9 and the lower face of the electrode 9 are used as capacities, the capacity of the cell can be increased, and the memory cell having a large operation margin is obtained. |
