METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to obtain the linearity of a resistor element by forming a resistor using lateral single crystal silicon growth. A gate polysilicon pattern is formed on a substrate(30). A source/drain region(34) is formed at both sides of the gate polysilicon pattern. A silicon layer of lateral single crystal structure is grown on the resultant structure by ESD(Elevated Source Drain) growth. The silicon layer is then patterned. A resistor is then formed by implanting dopants into the silicon pattern.