| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to remove an oxidized horn under a pre-cleaning process for removing a pad oxide layer by growing previously an oxide layer on a groove using an ozone treatment capable of oxidizing a horn portion. An isolation layer for defining an active region is formed on a semiconductor substrate(11) by removing a pad nitride layer. A groove(13) is formed on the resultant structure by etching selectively a gate forming portion of a substrate active region. An ozone treatment is performed on the resultant structure to oxidize a horn portion, wherein the horn portion is generated at a portion between the groove and the isolation layer.</p> |
