摘要 |
A repair input/output fuse circuit of a semiconductor memory device is provided to reduce layout area of a fuse by a half of the prior layout area, by indicating one repair input/output information with one input/output fuse. A repair input/output fuse circuit includes a plurality of input/output fuse circuits(100-0~100-3) outputting repair input/output information signals, respectively, according to the cut of a fuse in response to a repair signal and a chip enable signal. Each of the input/output fuse circuits includes one fuse, and outputs the repair input/output information signals, respectively, according to the fuse cut if the repair signal indicates the existence of s an address to be replaced and the chip enable signal is enabled.
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