发明名称 |
WORD LINE DRIVER FOR DRAM EMBEDDED IN A LOGIC PROCESS |
摘要 |
A word line driver provided for accessing a DRAM cell embedded in conventional logic process and includes a p-channel access transistor coupled to a cell capacitor. The word line driver includes an n-channel transistor located in a p-well, wherein the p-well is located in a deep n-well. The deep n-well is located in a p-type substrate. A word line couples the drain of the n-channel transistor to the gate of the p-channel access transistor. A negative boosted voltage supply applies a negative boosted voltage to the p-well and the source of the n-channel transistor. The negative boosted voltage is less than ground by an amount equal to or greater than the threshold voltage of the p-channel access transistor. The deep n-well and p-type substrate are coupled to ground. The polarities can be reversed in another embodiment. |
申请公布号 |
WO2007002509(A2) |
申请公布日期 |
2007.01.04 |
申请号 |
WO2006US24653 |
申请日期 |
2006.06.23 |
申请人 |
MONOLITHIC SYSTEM TECHNOLOGY, INC.;LEUNG, WINGYU |
发明人 |
LEUNG, WINGYU |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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