发明名称 |
Method for dry etching fluid feed slots in a silicon substrate |
摘要 |
A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrate. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.
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申请公布号 |
US2007000863(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050170895 |
申请日期 |
2005.06.30 |
申请人 |
BERNARD DAVID L;KRAWCZYK JOHN W;MCNEES ANDREW L |
发明人 |
BERNARD DAVID L.;KRAWCZYK JOHN W.;MCNEES ANDREW L. |
分类号 |
C23F1/00;B44C1/22;G11B5/127;H01L21/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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地址 |
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