发明名称 |
Method for preventing metal line bridging in a semiconductor device |
摘要 |
A method for forming a semiconductor device includes providing a substrate, providing aluminum metal lines on the substrate, forming a barrier layer over the aluminum metal lines, and forming a silicon-rich dielectric layer over the barrier layer. An inter-metal dielectric (IMD) layer may be formed to cover at least a portion of the silicon-rich dielectric layer.
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申请公布号 |
US2006292774(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20050166230 |
申请日期 |
2005.06.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN LEE-JEN;SU CHIN-TA;HUANG CHI-TUNG |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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