发明名称 APPARATUS AND METHOD FOR MEASURING SILICON CONCENTRATION IN PHOSPHORIC ACID SOLUTION
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and method for continuously and simply measuring a silicon concentration in a phosphoric acid solution of high temperature and high concentration used by circulating in an etching process at a low cost without pretreating, to manage an etching device under a condition where excellent process is always performed. SOLUTION: The apparatus is used for measuring the silicon concentration in the phosphoric acid solution under use as an etching solution during operation of a semiconductor substrate processing system. The equipment is provided with at least a reaction tank and a concentration-measuring tank. The reaction tank includes a reaction unit for adding hydrofluoric acid to a fixed amount of the phosphoric acid solution drawn out of the semiconductor substrate processing system to form a silicon fluoride compound and then causing the silicon fluoride compound to evaporate. The concentration-measuring tank comprises a hydrolysis unit for aerating the silicon fluoride compound, which has evaporated from the reaction tank, to deionized water to hydrolyze the silicon fluoride compound and a measurement unit for determining a change rate of silicon concentration in the deionized water subsequent to the aerating. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006352097(A) 申请公布日期 2006.12.28
申请号 JP20060136134 申请日期 2006.05.16
申请人 M FSI KK 发明人 TOTSU HARURU;IZUTA NOBUHIKO;YADA HIDEO
分类号 H01L21/306;G01N27/06 主分类号 H01L21/306
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