Semiconductor device and manufacturing method thereof

摘要

In a semiconductor device (10) circuit formation surfaces of each of a plurality of semiconductor chips (12, 13) can be easily located at even level when the semiconductor chips are arranged side by side so that a process of forming rearrangement wiring is simplified. The semiconductor chips are mounted on a substrate (11) via an adhesive layer (15) in a two-dimensional arrangement. A resin layer (14) is formed on the substrate (11) and located around the semiconductor elements. The resin layer (14) has the same thickness as a thickness of the semiconductor elements (12, 13). An organic insulating layer (16) is formed over a surface of the resin layer and circuit formation surfaces of the semiconductor elements. A
rearrangement wiring layer (17) is formed on the organic insulating layer (16) and electrodes of the semiconductor chips. External connection terminals are electrically connected to the circuit formation surfaces of the semiconductor elements through wiring in the rearrangement wiring layer.