| 摘要 |
<p>A semiconductor device and a method for fabricating the same are provided to prevent galvanic corrosion, thereby obtaining a gate structure having high reliability and improving performance of a transistor. A first gate electrode material layer(25) of a first conductive MOS transistor(2), a second electrode material layer(27) of a second conductive MOS transistor(3), and an electrode metal layer(29) are formed in a first trench(22). The first gate electrode material layer and the second gate electrode material layer are covered by the electrode metal layer in the first trench. The second gate electrode material layer is covered by the electrode metal layer in a second trench(23).</p> |
