| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of selectively removing a metallic layer in a predetermined gate opening, and reducing damage to a gate insulation film. SOLUTION: The manufacturing method of the semiconductor device includes a step of denting the upper surface of a first metallic layer 4 from the upper surface of an interlayer insulation film 11, a step of forming silicon layers 5 in gate openings C1 and C2, a step of removing the silicon layer 5 in the gate opening C2, a step of removing the first metallic layer 4 exposed in the second gate opening C2 by etching with a silicon layer 5p used as a mask, and a step of forming a second metallic layer for a second transistor on the interlayer insulation film 11 to fill the second gate opening C2. COPYRIGHT: (C)2007,JPO&INPIT
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