METHOD FOR FORMING A CAPACITOR IN A SEMICONDUCTOR

摘要

A method for manufacturing a capacitor of a semiconductor device is provided to improve the capacitance of the capacitor by using an enhanced lower electrode structure and a dielectric film made of metal oxide. A mold layer is formed on a substrate(100). An opening portion is formed on the resultant structure by etching selectively the mold layer. A lower electrode layer is formed on the resultant structure. A plurality of protrusions(155) are formed on the lower electrode layer. A lower electrode(150a) is formed by removing selectively the lower electrode layer from an upper portion of the mold layer. The mold layer is removed until an outer wall of the lower electrode is partially exposed to the outside. A nitride layer is formed by performing a nitridation on an exposed surface of the lower electrode. A dielectric film(165) made of metal oxide is formed on the nitride layer. An upper electrode layer is formed on the dielectric film.