| 摘要 |
<p>A semiconductor apparatus is provided to increase inner pressure of a gate structure and to reduce the effect of a dishing of an isolation dielectric generated in CMP process. A memory cell region is formed on a semiconductor substrate(1). A word line(8) is formed on the memory cell region. A first gate dielectric(2) is formed in the memory cell region under the word line. A first floating gate electrode(4) is formed on the first gate dielectric. A second gate dielectric(2') is formed in the memory cell region under the word line. A thickness of the second gate dielectric is different from that of the first gate dielectric. A second floating gate electrode(4) is formed on the second gate dielectric.</p> |
