| 摘要 |
A nitride-based light emitting device and a method for manufacturing the same are provided to widen the area of an active layer and to improve light emitting efficiency by growing the active layer at the side and the upper of an n-type nitride semiconductor layer. A buffer layer(310) is formed on a substrate(300), and an insulating layer(320) having a window is formed on the buffer layer. A GaN layer(330) is formed on the resultant structure, and an n-type nitride semiconductor layer(340) of trapezoid shape is formed on the GaN layer. An active layer(350) is surrounded to the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer(360) is formed on the active layer. A transparent electrode(370) and a p-type electrode(380) are sequentially formed on the resultant structure. The n-type nitride semiconductor layer is partially etched to form a groove. A passivation layer(390) is formed at inner sides of the groove, and an n-type electrode(400) is filled in the groove.
|
