SEMICONDUCTOR DEVICE AND RANDOM ACCESS MEMORY HAVING A SINGLE GATE ELECTRODE CORRESPONDING A PAIR OF FIN-TYPE CHANNEL REGIONS

摘要

A semiconductor device and a random access memory having a single gate electrode corresponding to a pair of fin-type channel regions are provided to increase operational current and operational speed by using a pair of channel regions as conductive paths of charges. A semiconductor substrate(110) includes a body(102) and a pair of pins(105a,105b) projected from the body. A source and a drain are formed at the pair of pins, respectively. A pair of channel regions are formed at inner surfaces of the pair of pins between the source and the drain. A gate electrode(130) includes a burial part for burying a gap between the pair of channel regions. The gate electrode is isolated from the semiconductor substrate. A source contact plug(135) is electrically connected with the source of the pair of pins and is isolated from the body. A drain contact plug(140) is electrically connected with the drain of the pair of pins and is isolated from the body.