SEMICONDUCTOR WAFER MANUFACTURING METHOD, SEMICONDUCTOR WAFER DOUBLE-SIDED GRINDING METHOD, AND SEMICONDUCTOR WAFER DOUBLE-SIDED GRINDING APPARATUS

摘要

PROBLEM TO BE SOLVED: To eliminate the degradation in chamfering profile and the variation in chamfering profile in the circumferential direction of a wafer while at the same time preventing cracking and chipping of the periphery of the wafer, when conducing double-sided grinding on the semiconductor wafer under such a state that the periphery is not chamfered (or the periphery is roughly chamfered). SOLUTION: The silicon wafer 1 is performed in double-sided grinding with the periphery 1R protected by a carrier 13 as a protection member. With one face 1a of the silicon wafer 1 floated from a pad 11 by supplying wafer to the face 1a, the other face 1b of the silicon wafer 1 is gripped and then the silicon wafer 1 is taken out of the carrier 13. After the double-sided grinding process (after taking out the wafer), a chamfering process is performed. COPYRIGHT: (C)2007,JPO&INPIT