发明名称 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
摘要 <p>In a plasma oxidation treatment apparatus (100), double plates (60) are arranged above a susceptor (2). An upper plate (61) and a lower plate (62) are composed of a dielectric material such as quartz, separately arranged in parallel at a prescribed interval, for instance an interval of 5mm, and have a plurality of through holes (61a, 62a). The two plates are arranged one over another by shifting the positions so that the through hole (62a) of the lower plate (62) and the through hole (61a) of the upper plate (61) are not overlapped.</p>
申请公布号 WO2006129643(A1) 申请公布日期 2006.12.07
申请号 WO2006JP310746 申请日期 2006.05.30
申请人 TOKYO ELECTRON LIMITED;YAMASHITA, JUN;NAKANISHI, TOSHIO;NISHITA, TATSUO 发明人 YAMASHITA, JUN;NAKANISHI, TOSHIO;NISHITA, TATSUO
分类号 H01L21/31;H01L21/316;H01L21/318;H05H1/46 主分类号 H01L21/31
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