发明名称 |
PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD |
摘要 |
<p>In a plasma oxidation treatment apparatus (100), double plates (60) are arranged above a susceptor (2). An upper plate (61) and a lower plate (62) are composed of a dielectric material such as quartz, separately arranged in parallel at a prescribed interval, for instance an interval of 5mm, and have a plurality of through holes (61a, 62a). The two plates are arranged one over another by shifting the positions so that the through hole (62a) of the lower plate (62) and the through hole (61a) of the upper plate (61) are not overlapped.</p> |
申请公布号 |
WO2006129643(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
WO2006JP310746 |
申请日期 |
2006.05.30 |
申请人 |
TOKYO ELECTRON LIMITED;YAMASHITA, JUN;NAKANISHI, TOSHIO;NISHITA, TATSUO |
发明人 |
YAMASHITA, JUN;NAKANISHI, TOSHIO;NISHITA, TATSUO |
分类号 |
H01L21/31;H01L21/316;H01L21/318;H05H1/46 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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