| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaAs single crystal, which prevents the profile of a solid-liquid interface from becoming unstable due to fluctuation in the temperature in a chamber and thereby prevent the crystal from becoming a polycrystal. SOLUTION: A cylindrical heat-guding member 7, whose lower end is located above the upper end of a crucible 3 before the start of pulling, whose upper end is in contact with the upper wall of a chamber 12 or is located in the vicinity of the upper wall, and which is provided with exhaust ports 8 formed at positions in the vicinity of the upper end of the chamber 12, is arranged so as to surround a pulling shaft 1. When pulling a single crystal 2, the heat being present below in the chamber is effectively guided to the region in the upper part of the chamber 12, in which region the temperature is lower, by making the heat pass through the inside of the cylindrical member 7 set to guide the heat. COPYRIGHT: (C)2007,JPO&INPIT
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