| 摘要 |
A GaN-based compound semiconductor and a method for fabricating the same are provided to secure P-type conductivity and obtain a good ohmic contact characteristic without an annealing process. A P-layer(17) including a P-type impurity is grown within a growth chamber. Hydrogen gas and hydrogen source gas are emitted within the growth chamber. A temperature lowering process is performed to lower temperature of a GaN-based chemical compound semiconductor(1) including the P-layer. The GaN-based chemical compound semiconductor is drawn. A P-electrode is formed on the P-layer by using at least one materials or an alloy of the metals selected from a group including Pt, Pd, and Au.
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