| 摘要 |
A thin film transistor and a method for manufacturing the same are provided to improve the characteristic of an interface between a gate insulating layer and a semiconductor layer, by consecutively depositing zinc oxide-based material layers to form the gate insulating layer and the semiconductor layer. A gate electrode(106) is formed on a substrate(101). A zinc oxide gate insulating layer(128) is formed on the gate electrode. A zinc oxide semiconductor layer(114) is formed on the zinc oxide gate insulating layer. Source and drain electrodes(108,110) are formed on the zinc oxide semiconductor layer, and separated from each other. A passivation layer(118) is formed on the entire surface of the resultant substrate, and has a contact hole for exposing a portion of the drain electrode. A pixel electrode(122) is connected to the drain electrode through the contact hole. |
