| 摘要 |
A vessel 1 composed of pyrolitic boron nitride (PBN) for growing a compound semiconductor single crystal is provided with a seed crystal accommodating part 1 a, a crystal growth part 1 b, and a diameter increasing part 1 c, wherein the vessel 1 is composed of pyrolitic boron plate (PBN) and a value of X-ray diffraction integrated intensity ratio {I<SUB>(002)</SUB>/I<SUB>(100)</SUB>} of (002) plane to (100) plane, measured at a plane vertical to a thickness direction of the PBN plate is more than 50 across a whole region of the vessel 1 . In the vertical crystal growth process, a high quality compound semiconductor single crystal with less crystal defect such as dislocation can be obtained by using the vessel 1 for growing a compound semiconductor single crystal and a method for fabricating a compound semiconductor single crystal using the vessel 1 , which can be easily fabricated and by which a shape of melt/crystal interface can be controlled without using complicated equipments.
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