Nanometer-scale semiconductor devices and method of making

摘要

A semiconductor device comprises: (a) a substrate (120); (b) a base epitaxial semiconducting layer (132) including a dopant of a first polarity disposed over the substrate; (c) a first semiconducting layer including a dopant of a second polarity disposed over the substrate; and (d) a first junction (134) formed between the base layer and first semiconducting layer. The first junction has an area having lateral dimension(s) of 75 nm. An independent claim is also included for a method for forming nanoscale semiconductor junctions comprising: (a) creating an imprint layer on an epitaxial semiconducting layer; (b) urging a nanoimprinter toward the imprint layer; (c) removing selective portions of the epitaxial layer; (d) forming an epitaxial semiconducting structure having an area with lateral dimension(s) of 75 nm; and (e) forming a first semiconducting junction having an area with lateral dimension(s) of 75 nm.