METHOD FOR FORMING COMPRESSIVE CHANNEL OF PMOS DEVICE USING GATE SPACER, AND PMOS DEVICE MANUFACTURED BY THE SAME

摘要

A method for forming a strained channel layer of a PMOS device using a gate spacer is provided to simplify the fabricating process as compared with a conventional silicon-germanium epitaxial layer by forming a strained silicon channel layer while using a silicon nitride layer used as a gate spacer. A buffer oxide layer(20) is formed on a silicon substrate(10) having a gate oxide layer(14) and a gate electrode(16). A silicon nitride layer(22) is formed on the buffer oxide layer. Impurity ions are implanted into the silicon nitride layer, having the same number of valence electrons as silicon. The impurity-implanted silicon nitride layer and the buffer oxide layer are patterned to form a gate spacer on both sidewalls of the gate electrode.