| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor switch circuit device in which leakage of high frequency signal is suppressed and degradation in strain characteristics is prevented. SOLUTION: Two interdigital gate electrodes are arranged in one active region. Two gate electrodes are arranged oppositely to mesh the interdigital teeth. A gate interconnect line is arranged between a first source electrode and a second source electrode and a drain interconnect line, or between a first drain electrode and a second drain electrode and a source interconnect line. Since the gate electrode of the off side FET has GND potential as high frequency signal, leakage of high frequency signal is prevented between drain and source. Since both gate electrodes are interdigital, resist removing liquid enters between adjacent gate electrodes sufficiently and lift-off is facilitated. COPYRIGHT: (C)2007,JPO&INPIT
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