ERASE DISCHARGE METHOD OF MEMORY DEVICE

摘要

An erase voltage discharge method of a memory device is provided to determine erase time by determining the time of starting a second discharge after a first discharge according to a CSL voltage during an erase operation of a memory cell. According to an erase voltage discharge method of a semiconductor memory device, a CSL(Common Source Line) of the semiconductor memory device is discharged first. The voltage of the CSL is detected during the first discharge. The detected CLS voltage is compared with a reference voltage. The CSL is discharged secondly, if the detected CLS voltage is lower than the reference voltage.