| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device where the resistance of an inversion layer to be formed can be reduced and a writing speed can be improved. SOLUTION: The device is provided with a first assist gate 13b which is formed on the main surface of a semiconductor substrate 11 and extends toward in one direction, a second assist gate 13d which is formed on the main surface of the semiconductor substrate 11 and extends along the first assist gate 13b, floating gates 14a1 to 14a3 which are disposed between the first assist gate 13b and the second assist gate 13d and can accumulate electrons, and swelling parts 20a to 20d which are formed below the first assist gate 13b on the main surface of the semiconductor substrate and swollen upward. COPYRIGHT: (C)2007,JPO&INPIT
|
