| 摘要 |
A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H<SUB>2</SUB>O, H<SUB>2</SUB>, a noble gas and N<SUB>2 </SUB>under conditions effective to oxidize outer surfaces of the source/drain regions. The N<SUB>2 </SUB>is present in the gas mixture at greater than 0% and less than or equal to 20.0% by volume. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H<SUB>2</SUB>O, H<SUB>2</SUB>, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions. The conditions comprise a pressure of greater than room ambient pressure. Other aspects and implementations are contemplated.
|
