| 摘要 |
<p>A flash memory device having improved erase efficiency and a method of fabricating the same are provided to obtain an effective erasing operation by increasing an overlapping region between a floating gate electrode pattern and a source region. A semiconductor substrate(200) has a recess region(202). A tunnel insulating layer(210) is formed in the recess region of the semiconductor substrate. A floating gate electrode(220) is arranged on the tunnel insulating layer to overlap with a sidewall of the recess region. An insulating layer between gates(230) is arranged on the floating gate electrode. A control gate electrode(240) is formed on the insulating layer between gates. An impurity region is arranged neighboring to the lateral side of the recess region of the semiconductor substrate. A metal-silicide layer is formed on the control gate electrode and an insulating hard mask layer is deposited on the metal-silicide layer. An insulating spacer film is formed in lateral side of the floating gate electrode, the insulating layer between gates, the control gate electrode, and the metal-silicide layer.</p> |
