| 摘要 |
A semiconductor device includes a capacitor with an MIM structure, by which the dimensional accuracy of the device is improved, and a stable capacitance value is given. The semiconductor device 100 includes: a semiconductor substrate 102 ; a capacitor forming region 130 in which an MIM capacitor is formed, which has an insulating interlayer 104 formed on the semiconductor substrate 102 , a first electrode 110 , and a second electrode 112 , and the first electrode 110 and the second electrode 112 are arranged facing each other through the insulating interlayer 104 ; and a shielding region 132 which includes a plurality of shielding electrodes 114 formed in the outer edge of the capacitor forming region 130 and, at the same time, set at a predetermined potential in the same layer as that of the MIM capacitor on the semiconductor substrate 102 , and shields the capacitor forming region 130 from other regions.
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