| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of dividing a wafer capable of dividing with no etching of a device when dividing a wafer along a division expected line, by etching the wafer along the division expected line. SOLUTION: The method of dividing the wafer in which a device is formed in the regions partitioned with a grid-like division expected line on its surface, divides it along the division expected line. It includes a resist film coating step in which the etching surface of the wafer is covered with a positive resist film in which an exposed region is removed by developing; a resist film removing step which removes the region corresponding to the division expected line of the positive resist film, by developing with exposure on the positive resist film coated on the etching surface of the wafer through a mask member which transmits light in the region corresponding to the division expected line of the wafer, while shields light in the region other than that corresponding to the division expected line; and an etching step to divide the wafer along the division line by etching the wafer on which the positive resist film is covered by the resist film removing process. COPYRIGHT: (C)2007,JPO&INPIT |
