| 摘要 |
A semiconductor device and a method for manufacturing using the same are provided to improve the character of the semiconductor device by selecting a sort of layer and depth of the layer. A device isolation layer(250) is formed to define an active region(200a) on a semiconductor substrate(200). A fin gate region is formed having rectangular shape and overlapping to a minor axis direction of the active region within a gate region overlapped with the active region. A channel impurity is implanted by using ions on the active region within the fin gate region. A first gate insulating layer, a first gate lower electrode, and a first electrode insulating layer are formed on the semiconductor substrate of a cell region projected upper the device isolation insulating layer. A second gate insulating layer is formed on a core/neighboring circuit region and the cell region. A second gate lower electrode and a second electrode insulating layer are formed on an entire surface. The first gate lower electrode and the second gate lower electrode are exposed. A gate upper electrode is formed and patterned to form a gate structure.
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