发明名称 |
Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput |
摘要 |
A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.
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申请公布号 |
US7125583(B2) |
申请公布日期 |
2006.10.24 |
申请号 |
US20020154897 |
申请日期 |
2002.05.23 |
申请人 |
INTEL CORPORATION |
发明人 |
ANDIDEH EBRAHIM;PETERSON KEVIN L.;BIELEFELD JEFF |
分类号 |
C23C16/40;C23C16/44;H05H1/24 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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