| 摘要 |
The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: - etching a hole in the substrate, - creating a first doping zone (Z-DIFF1) for defining a first electrode, - partitioning said first electrode into two electrodes, - applying a delimited oxide deposit inside and around the hole, - defining a second doping zone (Z-DIFF2) totally covering the hole, - removing the oxide deposit in order to define an element forming the resonator able to vibrate between the two electrodes.
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