| 摘要 |
A memory device is formed on a semiconductor-on-insulator (SOI) structure, the SOI structure including a substrate, an insulating layer on the substrate, and a semiconductor film on the insulating layer. The memory device includes a memory array in a memory region of the SOI structure, a plurality of first substrate contacts in the peripheral region of the memory device, and a plurality of second substrate contacts in the memory region of the SOI structure, wherein the first substrate contacts and the second substrate contacts are formed in and over the semiconductor film and in the insulating layer and are electrically connected to the substrate of the SOI structure.
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