STRUCTURE AND METHOD OF FABRICATING HIGH-DENSITY, TRENCH-BASED NON-VOLATILE RANDOM ACCESS SONOS MEMORY CELLS FOR SOC APPLICATIONS
摘要
<p>The present invention provides two-transistor silicon-oxide-nitride-oxide-semiconductor (2-Tr SONOS) non-volatile memory cells with randomly accessible storage locations as well as method of fabricating the same, hi one embodiment, a 2-Tr SONOS cell is provided in which the select transistor is located within a trench structure having trench depth from 1 to 2 µm and the memory transistor is located on a surface of a semiconductor substrate adjoining the trench structure. In another embodiment, a 2-Tr SONOS memory cell is provided in which both the select transistor and the memory transistor are located within a trench structure having the depth mentioned above.</p>
申请公布号
WO2006110781(A2)
申请公布日期
2006.10.19
申请号
WO2006US13561
申请日期
2006.04.12
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;MANDELMAN, JACK;HO, HERBERT;NING, TAK;OTANI, YOICHI