发明名称 DEPOSITION OF TITANIUM NITRIDE FILM
摘要 A method of depositing a titanium nitride film on a substrate by reacting titanium tetrachloride with ammonia, the method being less apt to cause the corrosion of the underlying layer. Titanium tetrachloride is reacted with ammonia in a region where the rate of film deposition is determined by the feeding. Thus, a first titanium nitride layer is formed on a substrate while minimizing the corrosion of the underlying layer. Subsequently, titanium tetrachloride is reacted with ammonia in a region where the rate of film deposition is determined by the reaction. Thus, a second titanium nitride layer is formed on the first titanium nitride layer while securing satisfactory step coverage.
申请公布号 KR20060107818(A) 申请公布日期 2006.10.16
申请号 KR20067012635 申请日期 2006.06.23
申请人 TOKYO ELECTRON LIMITED 发明人 MURAKAMI SEISHI;TADA KUNIHIRO
分类号 C23C16/34;H01L21/28;H01L21/285;H01L21/768 主分类号 C23C16/34
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